Efects of External Electric Field, Magnetic Field, and Magnetic Anisotropy on the Magnetic Properties of Fe Alloyed Gasb Diluted Magnetic Semiconductor and First Principle Study of Its Structural and Electronic Properties
| dc.contributor.author | Birile, Mesfi n | |
| dc.date.accessioned | 2020-10-01T10:08:50Z | |
| dc.date.accessioned | 2023-11-09T14:10:58Z | |
| dc.date.available | 2020-10-01T10:08:50Z | |
| dc.date.available | 2023-11-09T14:10:58Z | |
| dc.date.issued | 2020-08-08 | |
| dc.description.abstract | Starting with a Kondo lattice model type Hamiltonian, we have studied the e_ects of impurity concen- tration x, electric _eld, magnetic _eld, and magnetic anisotropy energy on the magnetic properties of Fe=GaSb diluted magnetic semiconductor. Analytical technique is employed to analyze the magnon dispersion relation, magnetization, critical temperature Tc, speci_c heat capacity, and susceptibility of the system. Our analysis indicate the enhancement of Tc with increasing impurity concentration x and/or with the magnetic and electric _elds. Due to the inclusion of the magnetic anisotropic energy, we could identify a signi_cant reduction of magnon dispersion/band gap energy and a slight reduction of magnetization. It is also shown that electric _eld and magnetic _eld have the tendency of enhancing the magnetic susceptibility and lowering the magnon speci_c heat when applied separately or simultane- ously. On the other hand, the magnon speci_c heat tends to slightly increase contrary to the magnetic susceptibility with increase in magnetic anisotropic energy. We have also investigated the structural and electronic properties of both pristine and Fe alloyed GaSb semiconductor using generalized gradient ap- proximation method (GGA) for versatile pseudopotentials within the density functional theory (DFT) using Quantum ESPRESSO package. These _rst-principles studies compare the lattice parameters, the band structures, the density of states, and the corresponding projected states of Fe/GaSb and GaSb. Our _ndings are in good agreement with experimental results showing 1:5 to 2% lattice parameter and 10% band gap variations and also within 3% band gap error from previous DFT calculations for GaSb. Moreover, the Hubbard model (DFT+U) calculations are performed for the energy band gap correction for the doped system. | en_US |
| dc.identifier.uri | http://10.90.10.223:4000/handle/123456789/22540 | |
| dc.language.iso | en | en_US |
| dc.publisher | Addis Ababa University | en_US |
| dc.subject | Efects of External Electric Field | en_US |
| dc.subject | Magnetic Field | en_US |
| dc.subject | Magnetic Anisotropy | en_US |
| dc.subject | Magnetic Properties | en_US |
| dc.subject | Fe Alloyed Gasb Diluted Magnetic Semiconductor | en_US |
| dc.subject | Its Structural and Electronic Properties | en_US |
| dc.title | Efects of External Electric Field, Magnetic Field, and Magnetic Anisotropy on the Magnetic Properties of Fe Alloyed Gasb Diluted Magnetic Semiconductor and First Principle Study of Its Structural and Electronic Properties | en_US |
| dc.type | Thesis | en_US |