Transport Properties of Charge Carriers in Organic Polymer Films Used in Field Effect Transistor
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Date
2018-10-03
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Addis Ababa University
Abstract
Application of a gate bias to an organic field-effect transistor leads to accumulation
of the charge carriers in an organic semiconductor within a thin region near an
interface of the gate dielectric. An important question raised by this study is
whether the charge transport in the region can be affected by thickness layer of
semiconductor, the morphology of active material and the gate bias are considered
as the factor for varying charge carrier mobility for this particular study.
In order to answer this question, we have performed Montecarlo simulation of
charge transport in organic field-effect transistor structure with a varying thickness
of the organic layer, the gate bias, and the morphology of active material taking into
account Coulomb interactions. We explain the charge carrier mobility as a function
of field strength for disorder parameter ^_ = 4 and ^_ = 3 to draw a conclusion for
strong disorder charge carrier mobility is good enough than weak disorder, For
gate bias since the number of particles on metallic contact depend on the gate bias
therefore when we increase the gate bias charge carrier mobility increases and for
different organic layer thickness specifically up to the third layer the charge carrier
mobility increase which leads us to a conclusion that charge transport in organic
semiconductor layer should be considered three dimensional.
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Keywords
A conjugated polymer, Electronic Structure, Organic Semiconductors