Optical Characterization of thin Film Solar Cells

dc.contributor.advisorDr. U. Stutenbaumer
dc.contributor.authorBekele, Endeshaw
dc.date.accessioned2021-12-13T11:37:22Z
dc.date.accessioned2023-11-09T11:26:50Z
dc.date.available2021-12-13T11:37:22Z
dc.date.available2023-11-09T11:26:50Z
dc.date.issued1996-06
dc.description.abstractThe optical propenies of glow discharge ( GO ) produced p-. i-. and n- layers of hydrogenated amorphous Silicon a - Si : H. thin films have been investigated over a wide photon energy range 1.24 eV < E < 3.54 eV using room temperature reflectance ( R ) and transmittance ( T) measurements. The data is compared with room temperature Rand T measurements done on the same samples in the laboratory of lSI - PV in Forschungszentrum, Jue/ich. Germany over an energy range of 1. 13 eV < E < 4. 13 eV. The similarities and dffferences between individual Rand T measurements done in the two laboratories and optical functions deduced from the measurements are discussed. A common value for the optical energy gap within the va lue ( up to .:': 0.04 eV) is obtained. As a solar cell component. the investigated sample p- layer does not harvest effectively photons from the visible sunlight energy spectrum. The possibility of the measurement of optical constants in the Addis Ababa University Department of Physics is verified for the first time.en_US
dc.identifier.urihttp://10.90.10.223:4000/handle/123456789/29256
dc.language.isoenen_US
dc.publisherAddis Ababa Universityen_US
dc.subjectOptical Characterizationen_US
dc.titleOptical Characterization of thin Film Solar Cellsen_US
dc.typeThesisen_US

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