Repository logo
  • English
  • Català
  • Čeština
  • Deutsch
  • Español
  • Français
  • Gàidhlig
  • Italiano
  • Latviešu
  • Magyar
  • Nederlands
  • Polski
  • Português
  • Português do Brasil
  • Srpski (lat)
  • Suomi
  • Svenska
  • Türkçe
  • Tiếng Việt
  • Қазақ
  • বাংলা
  • हिंदी
  • Ελληνικά
  • Српски
  • Yкраї́нська
  • Log In
    New user? Click here to register. Have you forgotten your password?
Repository logo
  • Colleges, Institutes & Collections
  • Browse AAU-ETD
  • English
  • Català
  • Čeština
  • Deutsch
  • Español
  • Français
  • Gàidhlig
  • Italiano
  • Latviešu
  • Magyar
  • Nederlands
  • Polski
  • Português
  • Português do Brasil
  • Srpski (lat)
  • Suomi
  • Svenska
  • Türkçe
  • Tiếng Việt
  • Қазақ
  • বাংলা
  • हिंदी
  • Ελληνικά
  • Српски
  • Yкраї́нська
  • Log In
    New user? Click here to register. Have you forgotten your password?
  1. Home
  2. Browse by Author

Browsing by Author "Tessema, Wudyalew"

Now showing 1 - 1 of 1
Results Per Page
Sort Options
  • No Thumbnail Available
    Item
    Electrical Properties of Junctions between Aluminium and Pol Y(3-0ctylphenylthiophene) (POPT)
    (Addis Ababa University, 1999-07) Tessema, Wudyalew; Workalemahu, Bantikassegn (PhD)
    This thesis is based on the study of the electronic properties of poly(3-octylphenylthiophene) (POPT) in the form of AlJPOPTIITO sandwich stlucture prepared in our laboratory using a vacuum evaporation technique. The electronic properties of the sandwich structure were analyzed using cmrent- voltage characteristics and complex impedance spectroscopy. The optical absorption spectrum of spin coated thin films of POPT was measured using Perkin Elmer 1..19 UVNislNIR spectrophotometer which showed a forbidden energy gap of about 1.77eV and hence it belongs to the class of semiconducting organic materials. The I-V characteristics of the sandwich structure show a rectifying behavior. The complex impedance analysis exhibits a bias voltage dependent part of a single semicircle in the Cole-Cole plot. This is modeled by one parallel RC electrical circuit, usually obtained fi·om metal-semiconductor (MS) devices

Home |Privacy policy |End User Agreement |Send Feedback |Library Website

Addis Ababa University © 2023