Elfagd, Yitagesu (PhD)Tamrat, Feredelign2019-10-182023-11-092019-10-182023-11-092018-11-05http://10.90.10.223:4000/handle/123456789/19507In this study, we considered the thermionic emission, field emission and tunneling and we derived current density as a functions of different parameters such as, temperature, barrier height, work function, bias voltage and dopant concentration for thermionic emission, field emission and tunneling enhanced electron transport across metal and N-type semiconductor interfaces. The result shows that the thermionic current density is increasing exponentially as a functions of bias voltage, the current density is also increasing as a quadratic functions of temperature and current density is increasing linearly as a functions of dopant concentration. Therefore, we carry out investigation how these factors affect the current density and we solve the current density analytically with a given parameters. The results are plotted using gnuplot.enCharge TransportAcross Metal N-TypeSemiconductor InterfacesThesis