Tessema, Genene (PhD)Yirdaw, Temesgen2018-07-052023-11-092018-07-052023-11-092007-08http://10.90.10.223:4000/handle/123456789/6522Studying the nature of defects in semiconductor helps to minimize the undesired behaviors they contribute. In this study, the perturbed angular correlation method has used to understand the formation of the substitutional %$'&)(+* pairs in silicon. T 0/2h1e pairs are characterized by a unique quadrupole interaction frequency of ,- . MHz, that suggest a strong interaction between acceptor and donor atoms in an elemental semiconductor silicon. The variation of the nearest neighbor * %$'&3( population with the annealing temperature is discussed. Finally, the binding energy and ratios of free and trapped states around the complex are determined using the fraction of the probe atom that form the pairs at annealing temperature intervals of 700C-100C C-1000CenVariation of the 111 CD - PThesis