Asfaw Araya (PhD)Teklu Nigatu2018-07-122023-11-182018-07-122023-11-182009-03http://etd.aau.edu.et/handle/12345678/8385The effect of ultraviolet(UV)radiation on polycrystalline silicon solar cell was studied. The reflectance spectrum, performance parameter and external quantum efficiency was analyzed by varying exposure time for different fluence of UV radiation. Reflectance spectrum showed increase for 10 minutes of exposure and starts to decrease and come back to nearly original value after 190 minutes exposure. Maximum potential power (Pmax) showed no change for all fluence of UV radiation. Short circuit current density (JSC) increase from 0.037 A cm2 to 0.041 A cm2 for 10 minutes of UV radiation exposure and external quantum efficiency (EQE) of polycrystalline silicon solar cell showed reduction for 10 minutes exposure and for the rest of fluences of UV radiation very small change of EQE was observed.enPolycrystalline Silicon Solar CellThesis