Bezludnyi, S. (PhD)Kassahun, Yosief2021-12-162023-11-092021-12-162023-11-091992-06http://10.90.10.223:4000/handle/123456789/29337The MOS and MNOS di odes, of which an oxidized silicon surface is an ; n tegra 1 pa rt. ; 5 i ntraduced. and a theory for its opera t i on in the absence of surface states is presented. Rea l time computer prog rammes fo r measurements and numerical ana lysis were constructed. Measurements of the MOS and MNOS st ructures were done fo r different n-type samples. of dry ox ide and pyrogenic oxide with different thickness of ox ide and nitride . In addit i on to t hi s irradiated samples by l -rays with energy 1- MeV we re measured. Oiffere nt methods of measurements of determining the density and energy di stribution of i nterface states at si li con- silicon dioxide in terfaces are described. By using the set of very se ns i tive electrical measure ments the density of interfa ce states were obtained. A comparison of the t heoret i cal capac i ta nce ve rsus voltage curves with meas ured experimenta l cu rves are shown. Computer simu lated resu lts of ca l cu l ati ons using integ ra tion and spline interpolati on are given. Obtained exper imen ta l res ul ts of ene rgy distribution of t he interfa ce state density of the order less than 10 10 states per eV cml are presented and discussed.enSemiconductor- InsuLator In terfaceThesis