Workalemahu, Bantikassegn (PhD)Tizazu, Getachew2018-06-262023-11-092018-06-262023-11-092001-06http://10.90.10.223:4000/handle/123456789/3410This thesis is based on the study of the electrical properties of the Sckottky barriers formed between aluminum and spin-coated films of PDOPT in the form of AI/PDOPT/PEDOT-PSS/ITO and AIIPDOPT/ITO sandwich structures, respectively. From the I-V characteristic, the rectification ratio, diode quality factor and barrier height have been obtained for both AIIPDOPT/PEDOT-PSS/ITO and for AIIPDOPT/ITO structures. The Cole-Cole plot of the complex impedance spectra for AI/PDOPT/ITO exhibits part of a single bias voltage-dependant semicircle, which is a characteristic of most metal semiconductor junctions. The complex impedance spectra of AI/PDOPT/ PEDOTPSS/ ITO device showed two partially overlapping semicircles at reveres bias voltages which revealed the existence of thin insulating interfacial layer at metal/polymer junctionenElectronic Properties of Junctions between AluminumThesis