Bekele, Mulugeta (PhD)Wami, Shiferaw2018-07-122023-11-182018-07-122023-11-182010-06http://etd.aau.edu.et/handle/12345678/8387Memcapacitors are capacitors whose capacitance depends on the past states through which the system has evolved. The focus of this thesis is on the possible realization of a three-layer solid-state memory capacitive (memcapacitive) system. The functioning of this device is based on the slow polarization rate of a medium between plates of a regular capacitor. To achieve this goal, this work considers a three-layer structure embedded in a capacitor. The three layer structure is formed by metallic layers separated by an insulator so that non-linear electronic transport between the layers can occur. Unlike conventional capacitor, the capacitance of this device depends on the history of the system. Our calculation shows non-pinched hysteretic charge-voltage and capacitance-voltage curves, and both negative and diverging capacitance within certain ranges of the field. This property of memcapacitive system makes it a good candidate for non-volatile memory application.enMemcapacitorThesis