Chernet AmenteDesea Mamiru2025-08-312025-08-312024-08https://etd.aau.edu.et/handle/123456789/7217Silicene, two dimensional form of silicon atom, has attractive considerable attention due to its promising applications in nanoelectronics. This study, investigates how doping carbons at different concentrations alters and improve its properties as well as intensify its applications. Inorder to investigate structural and electronic modifications produced by doping carbon atom in to silicene lattice, we use Density Functional Theory ( DFT). Our findings indicate that substituting carbon atoms leads to significant changes, starting with the emergence of a band gap at a dopant concentration of x = 0.22 in super cell of eighteen(18) silicon atoms. This transition converts silicene from a semimetal to a semiconductor. Furthermore, at both carbon dopant concentrations of x= 0.22 and x = 0.33, a direct band gap material is produced.The study provides understanding of how carbon doping influence the electronic properties of silicene, open the way for development of next generation technology.en-USSiliceneStructural PropertiesElectronic PropertiesDensity Functional TheoryThesis