Stutenbaeumer, Ulrich (PhD)Mesfin, Belayneh2018-06-192023-11-092018-06-192023-11-091998-06http://10.90.10.223:4000/handle/123456789/1764The transmittance spectra of a-Si:H pin solar cell samples having different i-layer thickness were measured with a Perkins Ehner Lambda 19 spectrometer. The spectra were simulated with the SCOUTFIT computer program by making use of the Forouhi and Bloomer dielectric fimction model to determine the values of the optical parameters (energy gap, refractive index and layer thickness) of the different layer systems (glass, TCO, p-, i- and n-Iayers) of the a-Si:H solar cell samples. The fitted values of the optical parameters are found to be in good agreement with published values. The I-V characteristics curves of a-Si:H solar cells were measured. The parameters J", V" , 11 and FF for the different samples, when the samples were illuminated with light of different intensities are determined and compared with published results. The paper presents the experimental results obtained from the transmittance spectra and the I-V characteristics meaSUl'ements of the solar cell samplesenOptical and Electrical PropertiesThesis