AB Initio calculation of Optical Absorption and Optical Gap of Silicon Nanocrystallites

dc.contributor.author	Gugsa, Derese
dc.date.accessioned	2018-06-20T13:35:10Z
dc.date.available	2018-06-20T13:35:10Z
dc.date.issued	2007-07
dc.identifier.uri	http://etd.aau.edu.et/handle/123456789/2381
dc.description.abstract	The electronic and optical properties of hydrogenated silicon nanocrystals have been investigated both in the ground- and in an excited-state configuration, through different ab-initio techniques. The presence of an electron-hole pair leads to a strong interplay between the structural and optical properties of the system. The aim of this work was to investigate the optical properties of hydrogenated Si nanoclusters (H-Si-nc) that has recent experimental interest for photonic applications. The optical absorption spectra of small SinHm nanoclusters are computed using a linear response theory within the time-dependent local density approximation (TDLDA). The TDLDA formalism allows the electronic screening and correlation effects, which determine exciton binding energies, to be naturally incorporated within an ab initio framework. We examined that the calculated excitation energies and optical absorption gaps to be in good agreement with experiment	en_US
dc.language.iso	en	en_US
dc.publisher	Addis Ababa University	en_US
dc.subject	AB Initio calculation	en_US
dc.title	AB Initio calculation of Optical Absorption and Optical Gap of Silicon Nanocrystallites	en_US
dc.type	Thesis	en_US