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Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/16695
Title: Temperature Dependence of the Optical Band Gap of a-Si:H Thin Films
???metadata.dc.contributor.*???: Dr. Ulrich Stutenbaeumer
Negash, Tesfaye
Issue Date: Jun-1998
Publisher: Addis Ababa University
Abstract: The near normal incidence transmittance spectra of p-, i- and n-layer a-Si:H thin film samples, prepared by glow discharge decomposition of silane (SiH4), were measured at two different temperatures (77 K and 300 K), for the first time at the Addis Ababa University. From the measured transmittance spectra the optical band gap of each a-Si:H thin film layer was calculated by computer simulation using the Forouhi and Bloomer dielectric function model which was derived for the interband transition of electrons. The effect of temperature on the optical band gap of a-Si:H thin films and hence on the solar cell application is discussed.
Description: A Thesis Presented to the School of Graduate Studies and the Faculty of Science Addis Ababa University in Partial Fulfillment of the Requirements for the Degree Master of Science in Physics.
URI: http://hdl.handle.net/123456789/16695
Appears in Collections:Thesis - Physics

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