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Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/16688
Title: Implantation of Ti into Oxides for Optical Applications
???metadata.dc.contributor.*???: Dr. Ch. Buchal
Thomas, Petros
Issue Date: Jun-1995
Publisher: Addis Ababa University
Abstract: Titanium (Ti+2) implantation and annealing of lithium niobate (LiNb03) and sapphire (A1203) has been investigated using RBS and SIMS measurements. The implantation was done at room temperature with doses- 1015Ti/cm2, 1016Ti/cm2, 5xlO,6Ti/cm2 and 10nTi/cm2. The energy of implantation was 400 keV. After implantation the samples were annealed with oven (1060°C for one hour) and rapid thermal annealer (1060°C for one minute). For the A12OJ samples high temperature furnace annealing (14tQQ0C for ope hour) \yas aJ$o jjsed.Then, the implanted and annealed samples were analysed with Rutherford. Backscattering Spectrometry using He+ ions as the analysing beam with an energy of 1.4 tMeV. Moreover, the LiNb03 samples were analysed with Secondary; Ipn Mass, S.pectrpmetry. The paper presents the experimental results obtained from the RBS and SIMS measurements.
Description: A Thesis Presented to the School of Graduate Studies and the Faculty of Science Addis Ababa University in Partial Fulfillment of the Requirements for the Degree Master of Science in Physics.
URI: http://hdl.handle.net/123456789/16688
Appears in Collections:Thesis - Physics

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