|Title:||Implantation of Ti into Oxides for Optical Applications|
|???metadata.dc.contributor.*???:||Dr. Ch. Buchal|
|Publisher:||Addis Ababa University|
|Abstract:||Titanium (Ti+2) implantation and annealing of lithium niobate (LiNb03) and sapphire (A1203) has been investigated using RBS and SIMS measurements. The implantation was done at room temperature with doses- 1015Ti/cm2, 1016Ti/cm2, 5xlO,6Ti/cm2 and 10nTi/cm2. The energy of implantation was 400 keV. After implantation the samples were annealed with oven (1060°C for one hour) and rapid thermal annealer (1060°C for one minute). For the A12OJ samples high temperature furnace annealing (14tQQ0C for ope hour) \yas aJ$o jjsed.Then, the implanted and annealed samples were analysed with Rutherford. Backscattering Spectrometry using He+ ions as the analysing beam with an energy of 1.4 tMeV. Moreover, the LiNb03 samples were analysed with Secondary; Ipn Mass, S.pectrpmetry. The paper presents the experimental results obtained from the RBS and SIMS measurements.|
|Description:||A Thesis Presented to the School of Graduate Studies and the Faculty of Science Addis Ababa University in Partial Fulfillment of the Requirements for the Degree Master of Science in Physics.|
|Appears in Collections:||Thesis - Physics|
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