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Title: Thermodynamics of the Metal Vacancy in 111ln Doped ZnSe
???metadata.dc.contributor.*???: Prof. Thomas Wichert
Tsige, Mesfin
Issue Date: Mar-1994
Publisher: Addis Ababa University
Abstract: Large scale application of the II-VI compound ZnSe has been hampered by the low conductivity of p-type ZnSe. Very recently, well-conducting p-type ZnSe samples have been produced, but it is still not known why acceptor doping of ZnSe is so difficult. Nonetheless, intrinsic point defects and impurities are blamed for this problem In the ZnSe semiconductor doped with In, the formation of InZn - VZn complexes is shown to occur using the radioactive dopant"' In along with the % perturbed yy angular correlation technique which seem to be responsible for the self-compensation of In donors in ZnSe. The formation and dissociation of these complexes were observed following a rapid quench of the material during annealing between 300 and 700 K in vacuum In light of this thermal stability of the complex, the migration energy of the metal vacancy defect VZn and its binding energy with the donor In is determined to be 1.30 ± 0.05 eVand 0.34 ± 0.03 eVrespectively
Description: A Thesis Presented to the School of Graduate Studies and the Faculty of Science Addis Ababa University in Partial Fulfillment of the Requirements for the Degree Master of Science in Physics.
Appears in Collections:Thesis - Physics

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