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Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/3660

Title: MECHANISMS FOR FORMATIONS OF PHOTOLUMINESCIENCE FROM SILICON AND GERMANIUM NANOSTRUCTURES AND FORMULATING MODELS.
Authors: SOLOMON, HAILEMARIAM
Advisors: Dr. Tesgera Badassa
Keywords: PHOTOLUMINESCIENCE
NANOSTRUCTURES
Copyright: Jun-2011
Date Added: 6-Nov-2012
Publisher: AAU
Abstract: Bulk silicon (Si) and germanium (Ge) have an indirect band gap transitions however when they are miniaturized to nanometer scale, the energy gap between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) increases, and hence the transition changes to direct due to confinement. The HOMO-LUMO gap determines the excitation of electrons so that the nanostructures will emit light. In this work,quantum confinement effects for Si and Ge,some methods to calculate band structures and formation mechanisms of photoluminescence from Si and Ge nanostructures are presented. We presented the parameters that influence the photoluminescence intensity of Si and Ge nanostructures. Finally we developed a model that could explain experimental results of Si nanocrystal photoluminescence versus size and wavelength by using Matlab program.
Description: A THESIS PRESENTED TO THE SCHOOL OF GRADUATE STUDIES ADDIS ABABA UNIVERSITY IN PARTIAL FULFILLMENT OF THE REQUIREMENTS FOR THE DEGREE OF MASTER OF SCIENCE IN PHYSICS
URI: http://hdl.handle.net/123456789/3660
Appears in:Thesis - Physics

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