|
Addis Ababa University Libraries Electronic Thesis and Dissertations: AAU-ETD! >
Faculty of Journalism and Communications >
Thesis - Journalism and Communication >
Please use this identifier to cite or link to this item:
http://hdl.handle.net/123456789/213
|
| Title: | VARIATION OF THE 11 CD - P POPULATION IN SILICON WITH ANNEALING TEMPERATURE |
| Authors: | Temesgen, Yirdaw |
| Advisors: | Dr. Genene Tessema |
| Copyright: | 2007 |
| Date Added: | 9-Nov-2007 |
| Publisher: | Addis Ababa University |
| Abstract: | Studying the nature of defects in semiconductor helps to minimize the undesired
behaviors they contribute. In this study, the perturbed angular correlation method
has used to understand the formation of the substitutional %$'&)(+* pairs in silicon.
The pairs are characterized by a unique quadrupole interaction 0/21 frequency of ,-.
MHz, that suggest a strong interaction between acceptor and donor atoms in
an elemental semiconductor silicon. The variation of the nearest neighbor * %$'&3( population with the annealing temperature is discussed. Finally, the binding
energy and ratios of free and trapped states around the complex are determined
using the fraction of the probe atom that form the pairs at annealing temperature
intervals of 700dgrC - 1000dgrC. |
| Description: | A THESIS PRESENTED TO
THE SCHOOL OF GRADUATE STUDIES
ADDIS ABABA UNIVERSITY
IN PARTIAL FULFILLMENT OF THE REQUIREMENTS
FOR THE DEGREE OF
MASTER OF SCIENCE in PHYSICS |
| URI: | http://hdl.handle.net/123456789/213 |
| Appears in: | Thesis - Physics
|
Items in the AAUL Digital Library are protected by copyright, with all rights reserved, unless otherwise indicated.
|
