AAU-ETD AAU-ETD
 

Addis Ababa University Libraries Electronic Thesis and Dissertations: AAU-ETD! >
Faculty of Journalism and Communications >
Thesis - Journalism and Communication >

Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/213

Title: VARIATION OF THE 11 CD - P POPULATION IN SILICON WITH ANNEALING TEMPERATURE
Authors: Temesgen, Yirdaw
Advisors: Dr. Genene Tessema
Copyright: 2007
Date Added: 9-Nov-2007
Publisher: Addis Ababa University
Abstract: Studying the nature of defects in semiconductor helps to minimize the undesired behaviors they contribute. In this study, the perturbed angular correlation method has used to understand the formation of the substitutional %$'&)(+* pairs in silicon. The pairs are characterized by a unique quadrupole interaction 0/21 frequency of ,-. MHz, that suggest a strong interaction between acceptor and donor atoms in an elemental semiconductor silicon. The variation of the nearest neighbor * %$'&3( population with the annealing temperature is discussed. Finally, the binding energy and ratios of free and trapped states around the complex are determined using the fraction of the probe atom that form the pairs at annealing temperature intervals of 700dgrC - 1000dgrC.
Description: A THESIS PRESENTED TO THE SCHOOL OF GRADUATE STUDIES ADDIS ABABA UNIVERSITY IN PARTIAL FULFILLMENT OF THE REQUIREMENTS FOR THE DEGREE OF MASTER OF SCIENCE in PHYSICS
URI: http://hdl.handle.net/123456789/213
Appears in:Thesis - Physics

Files in This Item:

File Description SizeFormat
Temesgen Yirdaw.pdf1.17 MBAdobe PDFView/Open

Items in the AAUL Digital Library are protected by copyright, with all rights reserved, unless otherwise indicated.

 

  Last updated: May 2010. Copyright © Addis Ababa University Libraries - Feedback