AAU-ETD AAU-ETD
 

Addis Ababa University Libraries Electronic Thesis and Dissertations: AAU-ETD! >
Faculty of Science >
Thesis - Physics >

Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/2098

Title: VARIATION OF THE CD - P POPULATION IN SILICON WITH ANNEALING TEMPERATURE.
Authors: Temesgen, Yirdaw
Advisors: Dr. Genene Tessema
Keywords: physics
Copyright: Aug-2007
Date Added: 2-May-2012
Publisher: aau
Abstract: Studying the nature of defects in semiconductor helps to minimize the undesired behaviors they contribute. In this study, the perturbed angular correlation method pairs in silicon. The pairs are characterized by a unique quadrupole interaction frequency of FED § B @ 8 6¢¢ CA97££¢ has used to understand the formation of the substitutional MHz, that suggest a strong interaction between acceptor and donor atoms in @ 8 6¢¢ Q97££¢ IG PH! an elemental semiconductor silicon. The variation of the nearest neighbor population with the annealing temperature is discussed. Finally, the binding energy and ratios of free and trapped states around the complex are determined using the fraction of the probe atom that form the pairs at annealing temperature 6R%%%! 6R%% 7P &S@ 7 PG intervals of .
URI: http://hdl.handle.net/123456789/2098
Appears in:Thesis - Physics

Files in This Item:

File Description SizeFormat
191.17 MBAdobe PDFView/Open

Items in the AAUL Digital Library are protected by copyright, with all rights reserved, unless otherwise indicated.

 

  Last updated: May 2010. Copyright © Addis Ababa University Libraries - Feedback