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Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/1244

Authors: Mandefro, Yehulie
Advisors: Dr. Bantikassegn Workalemahu,
Copyright: 2003
Date Added: 26-May-2008
Publisher: Addis Ababa university
Abstract: Abstract The electrical properties of junctions between a low work function metal (Al) and poly[3-(2’- butyloxy-5’-(1’’’-oxooctyl)phenyl)thiophene] in the form of Al/polymer/ITO sandwich structures have been investigated by means of complex impedance spectroscopy, currentvoltage (I-V), and capacitance-voltage (C-V) characteristics. The current–voltage curve is non-ohmic and reveals Schottky barrier type of rectification. The C-V data together with I-V characteristics confirms the polymer is a p-type semiconducting polymer. The complex impedance spectroscopy shows the absence of an insulating interfacial resistive layer. Schottky device parameters have been calculated from I-V curve by applying the thermionic emission equation. As result, saturation current density ( ) 2 13 0 2.2 10 cm J A − = × , ideality factor (n) = 3.5, rectification ratio = 1761, built-in voltage = 0.96V, potential barrier = 1.11eV, dopant density 17 3 ( ) 4.83 10 − N = × cm a , and depletion width at zero bias voltage = 25.7nm have been deduced from our experimental data.
Description: A Thesis Submitted to the School of Graduate Studies Addis Ababa University In Partial Fulfillment of the Requirements for the Degree of Master of Science in Physics
URI: http://hdl.handle.net/123456789/1244
Appears in:Thesis - Physics

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